| 摘要 |
PROBLEM TO BE SOLVED: To prevent a rise of plasma potential occurring due to insufficient DC ground, and to prevent occurrence of abnormal discharge in a plasma etching processing apparatus.SOLUTION: A plasma processing apparatus comprises: a vacuum container where plasma is generated inside; a base flange constituting a lower part of the vacuum container and grounded; a lower electrode arranged in the vacuum container and on which a sample to be worked is placed; a vertical drive mechanism vertically driving the lower electrode; a cylindrical first cover fixed to a ground potential part included in the lower electrode and for shielding the vertical drive mechanism from the plasma; and a cylindrical second cover fixed to the base flange and for shielding the vertical drive mechanism from the plasma. In the plasma processing apparatus performing surface processing on the sample to be worked with the plasma, the cylindrical second cover is made of conductor material. |
