| 发明名称 |
TIN ION-IMPLANTED SILICON OXIDE FILM ON SILICON SUBSTRATE |
| 摘要 |
FIELD: chemistry.SUBSTANCE: tin ion-implanted silicon oxide film on a silicon substrate includes alpha-tin nanoclusters. The film has thickness of 80-350 nm, average tin concentration in the range of 2.16 to 7.1 at % and the alpha-tin nanoclusters have a radius of 1.5 to 4 nm.EFFECT: film has higher intensity and a short photoluminescence bandwidth.2 dwg, 1 tbl, 5 ex |
| 申请公布号 |
RU2535244(C1) |
申请公布日期 |
2014.12.10 |
| 申请号 |
RU20130127976 |
申请日期 |
2013.06.18 |
| 申请人 |
FEDERAL'NOE GOSUDARSTVENNOE AVTONOMNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "URAL'SKIJ FEDERAL'NYJ UNIVERSITET IMENI PERVOGO PREZIDENTA ROSSII B.N. EL'TSINA" |
发明人 |
ZATSEPIN ANATOLIJ FEDOROVICH;BUNTOV EVGENIJ ALEKSANDROVICH;KORTOV VSEVOLOD SEMENOVICH |
| 分类号 |
H01L21/265;B82B3/00 |
主分类号 |
H01L21/265 |
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