APPARATUS FOR GENERATING PLASMA AND APPARATUS FOR TREATING SUBSTRATE COMPRISING THE SAME

摘要

The present invention relates to an apparatus for generating plasma and an apparatus for treating a substrate including the same. The apparatus for generating plasma according to an embodiment of the present invention includes: an RF power supply to provide an RF signal; a first plasma source which receives the RF signal to generate plasma from gas supplied into a chamber; a second plasma source which receives the RF signal to generate plasma from gas supplied into a chamber and connected to the first plasma source in parallel; a first variable load connected between an input terminal of the first plasma source and a ground; a second variable load connected between an input terminal of the second plasma source and the ground; and a controller to control the impedance of the first variable load and the impedance of the second variable load.