| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that provides an improved manufacturing yield. SOLUTION: The method of manufacturing the semiconductor device includes a step (A) of forming a semiconductor layer 12 of silicon carbide and a semiconductor layer 13a of silicon carbide thinner than the semiconductor layer 12 in this order on a substrate 11 of silicon carbide through epitaxial growth; a step (B) of forming a patterned mask layer 14 on the semiconductor layer 13a; a step (C) of subjecting the semiconductor layer 13a to oxidation processing using the mask layer 14 as a mask to replace the semiconductor layer 13a in a region not covered with the mask with an oxide film; and a step (D) of etching a region where the semiconductor layer 13a is oxidized on an inner peripheral side of the mask layer 14 and forming metal layers 15a and 15b respectively on the semiconductor layer 12 and on the opposite side of the substrate 11 from the side where the semiconductor layer 12 has been formed. COPYRIGHT: (C)2009,JPO&INPIT |
