| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas-barrier film and a method of manufacturing the same, by which high speed in-line processing of a gas-barrier layer to a web-form base material is achieved, with high productivity efficiency, and adhesive durability between the base material and the gas-barrier layer is improved. SOLUTION: In a reactive ion etching (RIE) processor constitution in which a metal roll electrode that is a high-frequency application electrode, and a ground electrode are arranged, inert gas is introduced between the electrodes with pressure of 0.5 Pa or more but less than 50 Pa, and a high-frequency voltage of a specified value is applied between electrodes with a specified interval, to generate high density plasma, and plasma processing is performed on a surface of a plastic film 100, and sufficient adhesive performance is obtained between the gas-barriers 102 composed of the base material and silicon oxide (SiOx), in the gas-barrier film. The method of manufacturing the same is also provided. COPYRIGHT: (C)2012,JPO&INPIT |
