发明名称 半導体薄膜の形成方法および薄膜半導体装置の製造方法
摘要 The present invention provides a method for forming a semiconductor thin film, which is capable of suppressing decrease in mobility due to heating and characteristic deterioration due to the decrease in mobility and which is capable of forming a semiconductor thin film with improved heat resistance by more simple procedures. A solution in which a plurality of types of organic materials including an organic semiconductor material are mixed is applied or printed on a substrate to form a thin film, and the plurality of types of organic materials are phase-separated by a process of drying the thin film. As a result, a layered structure semiconductor thin film is obtained, in which an intermediate layer b composed of an organic insulating material is sandwiched between two semiconductor layers a and a'.
申请公布号 JP5636626(B2) 申请公布日期 2014.12.10
申请号 JP20080287250 申请日期 2008.11.10
申请人 发明人
分类号 H01L21/368;H01L21/336;H01L29/786;H01L51/05;H01L51/40;H01L51/50 主分类号 H01L21/368
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