| 摘要 |
<p>Provided is an EUV mask blank to form a thin film absorption layer in comparison with an existing absorption layer by including the structure of an absorption layer controlled to reduce the change of a phase difference between the absorption layer and a reflection layer with regard to the change of a film thickness of the absorption layer. The reflective mask blank for EUV lithography is formed by successively forming the reflection layer to reflect EUV light and the absorption layer to absorb the EUV light on a substrate. The absorption layer is formed of a layer on a surface side (top layer) and a layer on a substrate side (bottom layer). One of the top layer and the bottom layer of the absorption layer is a Cr layer, and the other thereof is a TaPd layer. The total film thickness (L) of the absorption layer is between 30 and 45 nm. The film thickness of the TaPd layer is between 8 and 36 nm.</p> |
