| 发明名称 | Cell sensing circuit for phase change memory and methods thereof | ||
| 摘要 | A cell sensing circuit for a phase changing memory and methods thereof are provided. A specific one of the proposed methods includes: providing a sensing circuit having a sense amplifier, and two identical stable currents respectively received by a reference cell and a target cell; establishing a cell voltage on a cell side and a reference voltage on a reference side respectively via the two identical stable currents; and using the sense amplifier to determine a logic state of the target cell based on a voltage difference between the reference voltage and the cell voltage. | ||
| 申请公布号 | US8908426(B2) | 申请公布日期 | 2014.12.09 |
| 申请号 | US201213693816 | 申请日期 | 2012.12.04 |
| 申请人 | Macronix International Co., Ltd. | 发明人 | Wang Tien-Yen;Wu Chao-I;Hung Chun-Hsiung |
| 分类号 | G11C11/00;G11C13/00;G11C11/56;G11C7/06 | 主分类号 | G11C11/00 |
| 代理机构 | Volpe and Koenig, P.C. | 代理人 | Volpe and Koenig, P.C. |
| 主权项 | 1. A cell sensing circuit for a phase change memory, comprising: two current sources respectively generating two identical stable currents, wherein the phase change memory has a reference cell receiving one of the two identical stable currents to set up a reference voltage and a target cell receiving the other one of the two identical stable currents to set up a cell voltage, and the cell voltage is higher than a read voltage provided to the target cell; and A sense amplifier receiving the reference voltage and the cell voltage to determine a logic state of the target cell based on a voltage difference between the reference voltage and the cell voltage. | ||
| 地址 | TW | ||