发明名称 Semiconductor device
摘要 In a stacked chip system, an IO circuit connected to a TSV pad for IO and a switch circuit constitute an IO channel in each chip, the IO channels as many as the maximum scheduled number of stacks are coupled together and connected to constitute an IO group, and the chip has one or more such IO groups. Each TSV pad for IO is connected with a through via to an IO terminal at the same position in a chip of another layer. On an interposer, if the actual number of stacks is less than the maximum scheduled number of stacks, connection pads for IO in adjacent IO groups on the interposer are connected via a conductor.
申请公布号 US8908345(B2) 申请公布日期 2014.12.09
申请号 US201113332861 申请日期 2011.12.21
申请人 Hitachi,Ltd. 发明人 Furuta Futoshi;Osada Kenichi
分类号 H01L27/02;H02H9/04;H01L25/065;H01L23/62;H01L23/48 主分类号 H01L27/02
代理机构 Miles & Stockbridge P.C. 代理人 Miles & Stockbridge P.C.
主权项 1. A semiconductor device, comprising: a plurality of chips of the same type; and an interposer, including a plurality of connection pads, on which the plurality of chips are homogeneously stacked in a number of layers, wherein the number of layers is between one and a scheduled number of layers N, wherein each chip has a plurality of IO terminals, a plurality of IO circuits, a plurality of ON/OFF controllable switch circuits, and a core circuit, wherein each chip has one or more IO groups connected to the core circuit, each IO group includes a plurality of IO channels equal to the scheduled number of layers N, and each IO channel is formed from an IO terminal, an IO circuit and a switch circuit, wherein each connection pad is connected to a corresponding IO terminal in a chip of an adjacent layer using a through via, wherein, when the number of layers is more than one, each IO terminal is connected to a corresponding IO terminal in a chip of an adjacent layer using a through via, and wherein the scheduled number of layers N is four or more.
地址 Tokyo JP