发明名称 Electrical characterization for a semiconductor device pin
摘要 Embodiments related to electrically characterizing a semiconductor device are provided. In one example, a method for characterizing a pin of a semiconductor device is provided, the method comprising providing a test pattern to the semiconductor device. Further, the method includes adjusting a selected electrical state of a pin of the semiconductor device and measuring a value for a dependent electrical state of the pin responsive to the selected electrical state. The example method also includes generating an electrical characterization for the pin by correlating the dependent electrical state with the selected electrical state and outputting the electrical characterization for display.
申请公布号 US8907697(B2) 申请公布日期 2014.12.09
申请号 US201113223059 申请日期 2011.08.31
申请人 Teseda Corporation 发明人 Frost Jack;Salazar Joseph M.
分类号 G01R31/02;G01R31/317 主分类号 G01R31/02
代理机构 Stolowitz Ford Cowger LLP 代理人 Stolowitz Ford Cowger LLP
主权项 1. A method for electrically characterizing a pin of a semiconductor device, the method comprising: providing a test pattern to the semiconductor device; adjusting a selected electrical state of the pin of the semiconductor device; measuring a value for a dependent electrical state of the pin responsive to the selected electrical state; and generating an electrical characterization for the pin by correlating the dependent electrical state with the selected electrical state; and outputting the electrical characterization for display; wherein adjusting the selected electrical state includes adjusting a voltage incrementally within a selected voltage range, wherein measuring the value for the dependent electrical state includes measuring a current at each voltage increment in response to adjusting the voltage incrementally, and wherein generating the electrical characterization for the pin includes generating a voltage-current relationship.
地址 Portland OR US