| 发明名称 | Photoelectric conversion element and manufacturing method thereof | ||
| 摘要 | A photoelectric conversion element in accordance with an embodiment includes a photoelectric conversion layer, a cathode electrode, and an anode electrode. The cathode electrode is arranged on one surface of the photoelectric conversion layer and includes monolayer graphene and/or multilayer graphene in which a portion of carbon atoms is substituted with at least nitrogen atoms. The anode electrode is arranged on the other surface of the photoelectric conversion layer. | ||
| 申请公布号 | US8907352(B2) | 申请公布日期 | 2014.12.09 |
| 申请号 | US201113235400 | 申请日期 | 2011.09.18 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Naito Katsuyuki |
| 分类号 | H01L27/15;H01L51/42;H01L51/44;H01L51/00;H01L51/52;C23C16/26 | 主分类号 | H01L27/15 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A photoelectric conversion element comprising: a photoelectric conversion layer; a cathode electrode which is arranged on one surface of the photoelectric conversion layer and comprises monolayer graphene, multilayer graphene, or both, in which a portion of carbon atoms is substituted with at least nitrogen atoms; and an anode electrode which is arranged on the other surface of the photoelectric conversion layer, wherein a substitution amount of nitrogen atoms is from 0.1 to 30 atom %. | ||
| 地址 | Tokyo JP | ||