SiO_xprocess chemistry development using microwave plasma CVD

摘要

Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.

主权项

1. A method of depositing a film on a substrate, comprising:
positioning a substrate in a processing chamber; maintaining the processing chamber at a temperature below 200° C; flowing a reactant gas comprising a silane precursor and an oxidizing precursor into the process chamber, wherein the oxidizing precursor is selected from a group comprising O2, O3, and N2O and wherein the silane precursor to oxidizing precursor gas ratio is between 7:1 and 33:1; applying a microwave power through one or more antennas to create a microwave plasma from the reactant gas, wherein the reactant gas is mixed prior to forming the microwave plasma; and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.