| 发明名称 | Patterning process for oxide film | ||
| 摘要 | The present disclosure provides a patterning process for an oxide film, including: covering a barrier layer composition on a substrate to form a patterned barrier layer, wherein the barrier layer composition includes an inorganic component and an organic binder with a weight ratio of 50-98:2-50; forming an oxide film on the patterned barrier layer and the substrate, wherein a thickness ratio (D1/D2) of the barrier layer (D1) to the oxide film (D2) is about 5-2000; and lifting off the barrier layer and the oxide film thereon, while leaving portions of the oxide film on the substrate. | ||
| 申请公布号 | US8906247(B2) | 申请公布日期 | 2014.12.09 |
| 申请号 | US201313942162 | 申请日期 | 2013.07.15 |
| 申请人 | Industrial Technology Research Institute | 发明人 | Lin Chin-Ching;Chen Yu-Chun;Wang En-Kuang;Chiang Mei-Ching;Chen Yi-Chen |
| 分类号 | B44C1/22;H01L21/027 | 主分类号 | B44C1/22 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A patterning process for an oxide film, comprising: covering a barrier layer composition on a substrate to form a patterned barrier layer, wherein the barrier layer composition comprises an inorganic component and an organic binder with a weight ratio of 50-98:2-50; forming an oxide film on the patterned barrier layer and the substrate, wherein a thickness ratio (D1/D2) of the barrier layer (D1) to the oxide film (D2) is about 5-2000; and lifting off the barrier layer and the oxide film thereon, while leaving portions of the oxide film on the substrate. | ||
| 地址 | Hsinchu TW | ||