| 摘要 |
<p>The purpose of the present invention is to provide a thin film transistor and a manufacturing method thereof, capable of stabilizing an interface by forming an SiO_2 layer, which is a gate layer, after forming an Al_2O_3 layer on an oxide semiconductor including In, Ga, and Zn. The thin film transistor is composed of the oxide semiconductor (10) including In, Ga, and Zn; an Al_2O_3 layer (11) which is formed on the oxide semiconductor (10); and an oxide layer (12) which is formed on the Al_2O_3 layer.</p> |
