| 发明名称 | Monitor test key of epi profile | ||
| 摘要 | A method and apparatus for estimating a height of an epitaxially grown semiconductor material in other semiconductor devices. The method includes epitaxially growing first, second, and third portions of semiconductor material on a first semiconductor device, measuring a height of the third portion of semiconductor material and a height of the first or second portion of semiconductor material, measuring a first saturation current through the first and second portions of semiconductor material, measuring a second saturation current through the first and third portions of semiconductor material, and preparing a model of the first saturation current relative to the height of the first or second portion of semiconductor material and the second saturation current relative to an average of the height of the first and third portions of semiconductor material. The model is used to estimate the height of an epitaxially grown semiconductor material in the other semiconductor devices. | ||
| 申请公布号 | US8906710(B2) | 申请公布日期 | 2014.12.09 |
| 申请号 | US201113336306 | 申请日期 | 2011.12.23 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chang Chih-Sheng;Ho Chia-Cheng;Lin Yi-Tang |
| 分类号 | H01L21/66 | 主分类号 | H01L21/66 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method of estimating a height of an epitaxially grown semiconductor material in other semiconductor devices, comprising: epitaxially growing first, second, and third portions of semiconductor material on a first semiconductor device, the third portion of semiconductor material having a reduced size relative to the first and second portions of semiconductor material; measuring a height of the third portion of semiconductor material and a height of at least one of the first and second portions of semiconductor material; measuring a first saturation current through the first and second portions of semiconductor material; measuring a second saturation current through the first and third portions of semiconductor material; preparing a model of the first saturation current relative to the height of at least one of the first and second portions of semiconductor material and the second saturation current relative to an average of the height of the first and third portions of semiconductor material; and using the model to estimate the height of an epitaxially grown semiconductor material in the other semiconductor devices. | ||
| 地址 | Hsin-Chu TW | ||