Semiconductor element and manufacturing method and operating method of the same

摘要

A memory device and a manufacturing method of the same are provided. The memory device includes a substrate, a memory material layer, a first dielectric layer, a first gate layer, a second gate layer, and a source/drain (S/D) region. The substrate has a trench, and the memory material layer is formed on a sidewall of the trench. The first gate layer, the second gate layer, and the first dielectric layer, which is formed between the first gate layer and the second gate layer, are filled in the trench. The source/drain region is formed in the substrate and adjacent to the memory material layer. The first gate layer is extended in a direction perpendicular to a direction in which the source/drain region is extended.

主权项

1. A memory device, comprising:
a substrate having a trench; a memory material layer formed on a sidewall of the trench; a first dielectric layer, a first gate layer, and a second gate layer filled in the trench, wherein the first dielectric layer is formed between the first gate layer and the second gate layer; and a source/drain region formed in the substrate and adjacent to the memory material layer, wherein the substrate further has a long trench, and the source/drain region is formed within the surface of the long trench; wherein the first gate layer is extended in a direction perpendicular to a direction in which the source/drain region is extended.