| 摘要 |
<p>Provided is a plasma evaporation apparatus which can precisely induce a plasma beam to an evaporation material. A deposition apparatus (1) including a plasma evaporation apparatus includes a plurality of plasma guns (7) for evaporating deposition material (Ma). The plasma guns (7) include a first plasma gun (7R) having a magnetic force line (G) in the emission direction of a plasma beam (P); and a second plasma gun (7L) having a magnetic force line (G) in a direction opposite to the emission direction of a plasma beam. The plasma guns (7) are installed in a vacuum chamber (10) when viewed from a direction facing the deposition material (Ma), and the second plasma gun (7L) is not arranged at the right when the emission direction is forward with respect to the first plasma gun (7R).</p> |
