发明名称 |
Cold field electron emitters based on silicon carbide structures |
摘要 |
A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security. |
申请公布号 |
US8907553(B2) |
申请公布日期 |
2014.12.09 |
申请号 |
US201213569245 |
申请日期 |
2012.08.08 |
申请人 |
The United States of America as represented by the Secretary of Commerce, The National Institute of Standards and Technology |
发明人 |
Sharifi Fred;Kang Myung-Gyu;Lezec Henri |
分类号 |
H01J9/02;H01J1/00;H01J1/304 |
主分类号 |
H01J9/02 |
代理机构 |
Rankin, Hill & Clark LLP |
代理人 |
Bandy Mark E.;Rankin, Hill & Clark LLP |
主权项 |
1. A field emitter having a plurality of discrete emission projections extending from an emission face of the field emitter, the field emitter being monolithic and homogenous in a direction transverse to the emission face of the field emitter, wherein the emitter achieves an emission current density greater than 1 A/cm2 at an applied macroscopic electric field of 3 V/μm. |
地址 |
Washington DC US |