发明名称 Substrate to which film is formed, organic EL display device, and vapor deposition method
摘要 A film formation substrate (200) is a film formation substrate having a plurality of vapor deposition regions (24R and 24G) (i) which are arranged along a predetermined direction and (ii) in which respective vapor-deposited films (23R and 23G) are provided. The vapor-deposited film (24R) has inclined side surfaces 23s which are inclined with respect to a direction normal to the film formation substrate (200). A width, in the predetermined direction, of the vapor-deposited film (23R) is larger than the sum of (i) a width, in the predetermined direction, of the vapor deposition region (24R) and (ii) a width, in the predetermined direction, of a region (29) between the vapor deposition region (24R) and the vapor deposition region (24G).
申请公布号 US8907445(B2) 申请公布日期 2014.12.09
申请号 US201213980563 申请日期 2012.01.13
申请人 Sharp Kabushiki Kaisha 发明人 Sonoda Tohru;Kawato Shinichi;Inoue Satoshi;Hashimoto Satoshi
分类号 H01L27/32;C23C14/12;H05B33/10;H01L51/00;C23C14/04;H01L51/56 主分类号 H01L27/32
代理机构 Morrison & Foerster LLP 代理人 Morrison & Foerster LLP
主权项 1. A film formation substrate comprising a plurality of vapor deposition regions (i) which are arranged along a predetermined direction and (ii) in which respective vapor-deposited films are provided, each of the vapor-deposited films having inclined side surfaces in opposite parts, along the predetermined direction, of the each of the vapor-deposited films, the inclined side surfaces being inclined with respect to a direction normal to the film formation substrate, and a width, in the predetermined direction, of the each of the vapor-deposited films is larger than the sum of (i) a width, in the predetermined direction, of a corresponding one of the plurality of vapor deposition regions and (ii) a width, in the predetermined direction, of a region between the corresponding one of the plurality of vapor deposition regions and an adjacent one of the plurality of vapor deposition regions which is adjacent to the corresponding one of the plurality of vapor deposition regions.
地址 Osaka JP