Apparatus and method for maskless patterned implantation

摘要

A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate adjacent to a plasma chamber containing a plasma, such that the extraction plate extracts ions from the plasma through at least one aperture that provides an ion beam having ions distributed over a range of an angles of incidence on the workpiece. The method may include scanning the workpiece with respect to the extraction plate and varying a power level of the plasma during the scanning from a first power level to a second power level, wherein at a surface of the workpiece, a first beam width at a first power level is greater than a second beam width at a second power level.

主权项

1. A method of implanting a workpiece in an ion implantation system, comprising:
providing an extraction plate adjacent to a plasma chamber containing a plasma, the extraction plate configured to provide an ion beam having ions distributed over a range of angles of incidence on less than an entirety of a surface of the workpiece facing the extraction plate; scanning the workpiece with respect to the extraction plate; and varying a power level of the plasma during the scanning from a first power level to a second power level, wherein at the surface of the workpiece, a first beam width at the first power level is greater than a second beam width at the second power level; wherein an extraction voltage is applied as pulses between the plasma and workpiece; wherein a first duty cycle of the extraction voltage pulses is applied during periods when the first power level of the plasma is applied; and wherein a second duty cycle of the extraction voltage pulses is applied during periods when the second power level of the plasma is applied, the second duty cycle being different than the first duty cycle.