发明名称 Metal organic chemical vapor deposition equipment
摘要 Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.
申请公布号 US8906162(B2) 申请公布日期 2014.12.09
申请号 US201213360366 申请日期 2012.01.27
申请人 Sumitomo Electric Industries, Ltd. 发明人 Ueno Masaki;Ueda Toshio;Takasuka Eiryo
分类号 C23C16/50;C23C16/00;C23F1/00;H01L21/306;C30B35/00;C23C16/30;C30B25/16;C23C16/455 主分类号 C23C16/50
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. Metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, comprising: a heating component heating said substrate and having a holding surface for holding said substrate; and a horizontal-type flow channel for introducing said reactant gas to said substrate, wherein: said heating component is rotatable with said holding surface kept facing an inner portion of said flow channel, a height of said flow channel along a flow direction of said reactant gas is kept constant from a position located upstream of said holding surface to an arbitrary position located above said holding surface, and said height of said flow channel along a flow direction of said reactant gas is monotonically decreased from said arbitrary position to a position located downstream of said arbitrary position, and a height of said flow channel along a width direction is monotonically decreased from each end portion of said holding surface to a central portion of said holding surface.
地址 Osaka JP
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