发明名称 Device and method for neuromorphic data processing using spiking neurons
摘要 A neuromorphic data processing device comprising a plurality of spiking neurons, with each of these neurons comprising: an integrator designed to receive successive analog pulses each having a certain value, and accumulate the values of the pulses received in a recorded value, referred to as accumulation value, and a discharger designed to emit a pulse, referred to as discharge pulse, according to the accumulation value, and a silicon support having two surfaces, the neurons being carried out on at least one of the two surfaces, the integrator of each neuron comprising a metal via of the TSV type between the two surfaces of the silicon support, the metal via of the TSV type forming a capacitor with the silicon support and having an electric potential forming the accumulation value wherein the values of the pulses received are accumulated and according to which the discharge pulse is emitted.
申请公布号 US8909577(B2) 申请公布日期 2014.12.09
申请号 US201213549990 申请日期 2012.07.16
申请人 Commissariat à l'énergie et aux énergies alternatives 发明人 Heliot Rodolphe;Duranton Marc;Joubert Antoine
分类号 G06F15/18;G06J1/00;G06N3/00;G06G7/00;G06N3/02;G06N3/063 主分类号 G06F15/18
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A neuromorphic data processing device, comprising: a plurality of spiking neurons, each said spiking neuron including: an integrator configured to: receive successive analog pulses, each having a certain value, andaccumulate the certain values of the received analog pulses in a recorded value, referred to as an accumulation value; a discharger configured to: emit a pulse, referred to as a discharge pulse, according to the accumulation value; and a silicon support having two surfaces, wherein a portion of each of the spiking neurons is provided on at least one of the two surfaces, wherein the integrator of each said spiking neuron has a metal Through-Silicon Via (TSV) between the two surfaces of the silicon support, the metal TSV forming a capacitor with the silicon support and having an electric potential forming the accumulation value, wherein the certain values of the received analog pulses are accumulated in the accumulation value, and wherein the discharge pulse is emitted according to the accumulation value.
地址 Paris FR