| 发明名称 |
Optoelectronic semiconductor chip |
| 摘要 |
In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfills the condition:
40≦∫c(z)dz−2.5N−1.5∫dz≦80. |
| 申请公布号 |
US8908733(B2) |
申请公布日期 |
2014.12.09 |
| 申请号 |
US201013262583 |
申请日期 |
2010.03.10 |
| 申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
Avramescu Adrian;Queren Désirée;Eichler Christoph;Sabathil Matthias;Lutgen Stephan;Strauss Uwe |
| 分类号 |
H01S5/00;B82Y20/00;H01L33/06;H01S5/34;H01S5/343;H01L33/32 |
主分类号 |
H01S5/00 |
| 代理机构 |
|
代理人 |
O'Connor Cozen |
| 主权项 |
1. An optoelectronic semiconductor chip, based on a nitride material system, comprising:
at least one active quantum well; wherein during operation electromagnetic radiation is generated in the at least one active quantum well; wherein the active quantum well comprises N successive zones (A) in a direction parallel to a growth direction z of the optoelectronic semiconductor chip, N being a natural number; wherein at least two of the successive zones (A) have average indium contents c which differ from one another; wherein the at least one active quantum well fullfils the following condition:
40≦∫c(z)dz−2.5N−1.5∫dz≦80; wherein N is greater than or equal to 4 and in which, in the direction parallel to the growth direction z and from a p-connection side (p) towards an n-connection side (n) of the optoelectronic semiconductor chip, the following relationships apply for an average indium content c for at least some of the successive zones (A):
ci<ci+1 and ci+1>ci+2, and ci<ci+2; wherein the successive zones (A) are numbered consecutively in a direction parallel to the growth direction z; wherein a total thickness of the active quantum well is between 3.5 nm and 8 nm, inclusive; wherein a thickness of each zone of the successive zones is between 1.5 nm and 3 nm, inclusive; and wherein the indium content of at least one zone, which is adjacent to a zone with a maximum indium content, is between 40% and 60% inclusive of an average indium content of the zone with the maximum indium content. |
| 地址 |
Regensburg DE |
