发明名称 |
TSV structure with a built-in U-shaped FET transistor for improved characterization |
摘要 |
A through-the silicon via (TSV) structure providing a built-in TSV U-shaped FET that includes an annular gate shaped as a TSV partially embedded in a substrate, the annular gate having an inner and an outer surface bound by an oxide layer; a drain formed on an isolated epitaxial layer on top of the substrate conformally connecting the gate oxide layer surrounding the inner annular surface of the TSV; a source partially contacting said gate oxide layer conformally contacting gate oxide layer surrounding the outer surface of the TSV. |
申请公布号 |
US8907410(B2) |
申请公布日期 |
2014.12.09 |
申请号 |
US201313870038 |
申请日期 |
2013.04.25 |
申请人 |
International Business Machines Corporation |
发明人 |
Kothandaraman Chandrasekharan;Rosenblatt Sami;Wang Geng |
分类号 |
H01L29/78;H01L21/336;H01L29/66;H01L21/8234;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
Schnurmann H. Daniel |
主权项 |
1. A semiconductor structure comprising:
a) a built-in U-shaped FET transistor having a TSV providing an annular gate, said TSV partially buried in a substrate, said annular gate being bound by an oxide layer, said annular gate having an inner and outer surface; b) a drain formed on an isolated epitaxial layer on a top surface of said substrate conformally connected to said gate oxide layer surrounding said inner surface of said TSV; and c) a source partially contacting said gate oxide layer conformally connected to said gate oxide layer surrounding said outer surface of said TSV. |
地址 |
Armonk NY US |