发明名称 Optoelectronic semiconductor component
摘要 An optoelectronic semiconductor component includes a substrate that has an upper side and an under side lying opposite the upper side. The substrate is formed with an electrically conductive mounting region, an electrically conductive connection region and an electrically isolating oxidation region. An optoelectronic part is arranged on the upper side of the substrate in the region of the mounting region. The oxidation region electrically isolates the mounting region from the connection region. The oxidation region extends, without interruption, from the upper side of the substrate to the underside of the substrate. The mounting region and the connection region are formed with aluminum and the oxidation region is formed with an oxide of the aluminum. The mounting region, the oxidation region and the connection region being are designed contiguously to form an entity.
申请公布号 US8907369(B2) 申请公布日期 2014.12.09
申请号 US201113818021 申请日期 2011.08.18
申请人 OSRAM Opto Semiconductors GmbH 发明人 Zitzlsperger Michael;Ramchen Johann
分类号 H01L33/00;H01L33/64;H01L33/48;H01L33/62;F21V29/00 主分类号 H01L33/00
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. An optoelectronic semiconductor component, comprising: a carrier having a top side and an underside located opposite the top side, wherein the carrier includes an electrically conductive mounting region, an electrically conductive connection region and an electrically insulating oxidation region; an optoelectronic element arranged at the top side of the carrier at the mounting region; wherein the oxidation region electrically insulates the mounting region from the connection region; wherein the oxidation region extends without interruption from the top side of the carrier toward the underside of the carrier; wherein the mounting region and the connection region comprise aluminum; wherein the oxidation region comprise an oxide of the aluminum; and wherein the mounting region, the oxidation region and the connection region are embodied in a contiguous fashion and form one unit; wherein the carrier further comprises a further oxidation region located at the underside of the carrier near the mounting region and/or in the region of the connection region and wherein the carrier comprises a contact element configured to fix the optoelectronic semiconductor component on an external contact carrier; wherein the further oxidation region does not completely form the carrier at any place in a vertical direction, the vertical direction being aligned perpendicular to a main extension direction of the carrier; and wherein the further oxidation region does not form a unit with the oxidation region of the carrier and wherein the further oxidation region is applied between the contact element and the mounting region along the vertical direction and wherein the contact element is electrically insulated from the mounting region by the further oxidation region.
地址 Regensburg DE