| 发明名称 |
Bipolar junction transistor in silicon carbide with improved breakdown voltage |
| 摘要 |
In one general aspect, a silicon carbide (SiC) bipolar junction transistor (BJT) can include a collector region, a base region having an extrinsic part, and an emitter region. The SiC BJT can include a surface passivation layer deposited on the extrinsic part between an emitter contact contacting the emitter region and a base contact contacting the base region. The SiC BJT can also include a surface gate at the surface passivation layer where the surface gate has at least a portion disposed over the extrinsic part of the base region. |
| 申请公布号 |
US8907351(B2) |
申请公布日期 |
2014.12.09 |
| 申请号 |
US201314068941 |
申请日期 |
2013.10.31 |
| 申请人 |
Fairchild Semiconductor Corporation |
发明人 |
Domeij Martin |
| 分类号 |
H01L29/15;H01L29/66;H01L29/73;H01L29/40;H01L29/16;H01L29/732;H01L29/739 |
主分类号 |
H01L29/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A silicon carbide (SiC) bipolar junction transistor (BJT), comprising:
a collector region; a base region having an extrinsic part; an emitter region; a surface passivation layer deposited on the extrinsic part between an emitter contact contacting the emitter region and a base contact contacting the base region; and a surface gate at the surface passivation layer, the surface gate having at least a portion disposed over the extrinsic part of the base region. |
| 地址 |
San Jose CA US |
