Method of fabricating an interconnect device

摘要

An interconnect device and a method for fabricating same. An embodiment of the invention includes sequential steps of providing a flexible substrate, forming vias through the flexible substrate, applying a conductive seed layer including first and second portions, applying conductive materials including first and second portions, copper plating the substrate, and then removing the second portions of the conductive seed layer and the conductive materials.

主权项

1. A method for fabricating an interconnect device, consisting of the following in consecutive order:
(a) providing a substrate; then (b) forming vias through the substrate; then (c) printing a patterned conductive seed layer onto the substrate; then (d) joining a primary conductor layer to the substrate; then (e) applying a covering over the primary conductor layer; and then (f) applying finish metal;wherein said step of joining a primary conductor layer to the substrate, the primary conductor layer is at a thickness range of about 10 μm to 80 μm; and wherein said step of printing said patterned conductive seed layer provides an electrical conductivity throughout the interconnect device greater than half the Q value of copper.