METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

Provided is a method for manufacturing a semiconductor device which includes NMOS and PMOS transistor electrodes. The method for manufacturing the semiconductor device includes the steps of: providing a substrate which includes a first region and a second region; forming a gate insulation layer on the substrate; forming a first gate electrode layer on the gate insulation layer; forming a first impurity layer and a first capping layer on the first gate electrode layer; removing the first impurity layer and the first capping layer on the second region to expose the upper side of the first gate electrode layer on the second region using a mask pattern as an etching mask; and forming a second impurity layer on the first gate electrode layer of the second region and the first capping layer of the first region.