| 发明名称 | Semiconductor memory device and operating method thereof | ||
| 摘要 | An operating method of a semiconductor memory device includes precharging a channel region of a program-inhibited cell of first memory cells coupled to a first word line, selected from a first one of word line groups between a drain select line and a source select line, to a first level based on first data; performing a first program operation for storing the first data in the first memory cells; precharging the channel region of a program-inhibited cell of second memory cells coupled to a second word line, selected from a second one of the word line groups, to a second level based on second data to be stored in the second memory cells; and performing a second program operation for storing the second data in the second memory cells. | ||
| 申请公布号 | US8908456(B2) | 申请公布日期 | 2014.12.09 |
| 申请号 | US201213602021 | 申请日期 | 2012.08.31 |
| 申请人 | SK Hynix Inc. | 发明人 | Park Kyoung Hwan;Kim Seung Won |
| 分类号 | G11C7/00;G11C7/12 | 主分类号 | G11C7/00 |
| 代理机构 | William Park & Associates Patent Ltd. | 代理人 | William Park & Associates Patent Ltd. |
| 主权项 | 1. An operating method of a semiconductor memory device, comprising: precharging a channel region of a program-inhibited cell, from among first memory cells coupled to a first word line selected from a first word line group of word line groups between a drain select line and a source select line, to a first level based on first data; performing a first program operation for storing the first data in the first memory cells; precharging a channel region of a program-inhibited cell, from among second memory cells coupled to a second word line selected from a second word line group of the word line groups, to a second level different from the first level based on second data; and performing a second program operation for storing the second data in the second memory cells. | ||
| 地址 | Gyeonggi-do KR | ||