发明名称 |
Magnetization switching through magnonic spin transfer torque |
摘要 |
The subject application describes systems and methods that drive magnetization switching through magnonic spin transfer torque. A spin current is provided to a first magnetic layer with a first magnetic state. The spin current facilitates magnetization switching via a magnonic spin transfer torque in a second magnetic layer with a second magnetic state that is separated from the first magnetic layer by an interface. Alternatively, a spin current is provided to a first magnetic domain with a first magnetic state. The spin current facilitates domain wall propagation via a magnonic spin transfer torque. The domain wall is between the first magnetic domain and a second magnetic domain in a second magnetic state. |
申请公布号 |
US8908424(B2) |
申请公布日期 |
2014.12.09 |
申请号 |
US201213630060 |
申请日期 |
2012.09.28 |
申请人 |
The Hong Kong University of Science and Technology |
发明人 |
Wang Xiangrong;Yan Peng;Wang Xiansi |
分类号 |
G11C11/00;G11C11/14;H01L29/82;H01L29/66;G11B5/66;G11B5/02;G11B5/00 |
主分类号 |
G11C11/00 |
代理机构 |
Amin, Turocy & Watson, LLP |
代理人 |
Amin, Turocy & Watson, LLP |
主权项 |
1. A spintronic device, comprising:
a first magnetic domain with a first magnetization direction; a second magnetic domain with a second magnetization direction opposite from the first magnetization direction; and a magnetic domain wall between the first magnetic domain and the second magnetic domain, wherein the spintronic device is within a magnetic nanowire with an easy axis parallel to the first magnetization direction. |
地址 |
Kowloon HK |