发明名称 Magnetization switching through magnonic spin transfer torque
摘要 The subject application describes systems and methods that drive magnetization switching through magnonic spin transfer torque. A spin current is provided to a first magnetic layer with a first magnetic state. The spin current facilitates magnetization switching via a magnonic spin transfer torque in a second magnetic layer with a second magnetic state that is separated from the first magnetic layer by an interface. Alternatively, a spin current is provided to a first magnetic domain with a first magnetic state. The spin current facilitates domain wall propagation via a magnonic spin transfer torque. The domain wall is between the first magnetic domain and a second magnetic domain in a second magnetic state.
申请公布号 US8908424(B2) 申请公布日期 2014.12.09
申请号 US201213630060 申请日期 2012.09.28
申请人 The Hong Kong University of Science and Technology 发明人 Wang Xiangrong;Yan Peng;Wang Xiansi
分类号 G11C11/00;G11C11/14;H01L29/82;H01L29/66;G11B5/66;G11B5/02;G11B5/00 主分类号 G11C11/00
代理机构 Amin, Turocy & Watson, LLP 代理人 Amin, Turocy & Watson, LLP
主权项 1. A spintronic device, comprising: a first magnetic domain with a first magnetization direction; a second magnetic domain with a second magnetization direction opposite from the first magnetization direction; and a magnetic domain wall between the first magnetic domain and the second magnetic domain, wherein the spintronic device is within a magnetic nanowire with an easy axis parallel to the first magnetization direction.
地址 Kowloon HK