发明名称 CNT-based sensors: devices, processes and uses thereof
摘要 Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed.
申请公布号 US8907384(B2) 申请公布日期 2014.12.09
申请号 US200712161294 申请日期 2007.01.26
申请人 NanoSelect, Inc. 发明人 Pace Salvatore J.;Man Piu Francis;Patil Ajeeta Pradip;Tan Kah Fatt
分类号 H01L21/66;G01N27/414;B82Y15/00;B82Y30/00 主分类号 H01L21/66
代理机构 Duane Morris LLP 代理人 Duane Morris LLP
主权项 1. An antennae assembly electrode, comprising: an electrically conductive layer at least partially surmounting a substrate; a planar protective layer, said protective layer having a plurality of contact holes; and an assembly of doped antennae vertically oriented with respect to the electrically conductive layer and electrically connected with the electrically conductive layer through the contact holes, wherein each of the doped antennae comprises a doped MWNT comprising: a base end attached to the electrically conductive layer,a mid-section comprising an outer surface surrounding a lumen, wherein a majority of the outer surface of the mid-section is in fluidic contact with an environment in contact with a top end of the antennae;the top end disposed opposite to the base end, wherein neither the mid-section nor the top end are connected to the electrically conductive layer; anda dopant attached to or contained within the lumen, a dopant attached to or contained within the outer surface, a dopant attached to or contained within the top end, or any combination thereof.
地址 Wilmington DE US