| 摘要 |
<p>According to the present invention, there is provided an apparatus for processing a semiconductor workpiece, which includes: a first chamber having a first plasma production source and a first gas supply for introducing a supply of gas into the first chamber; a second chamber having a second plasma production source and a second gas supply for introducing a supply of gas into the second chamber, the second gas supply being independently controllable of the first gas supply; a workpiece support positioned in the second chamber; and a plurality of gas flow pathway defining elements for defining a gas flow pathway in the vicinity of the workpiece when positioned on the workpiece support, wherein the gas flow path defining elements include at least one wafer edge region protection element for protecting the edge of the wafer and/or a wafer edge peripheral region , and at least one auxiliary element spaced apart from the wafer edge region protection element to define the gas flow pathway.</p> |
