发明名称 Wiring substrate, method of manufacturing the same, and semiconductor device
摘要 A wiring substrate includes: a substrate layer made of glass or silicon and including: a first surface formed with a first hole; and a second surface formed with a second hole and being opposite to the first surface, wherein the first hole is communicated with the second hole; a connection pad formed in the second hole; a first wiring layer formed in the first hole and electrically connected to the connection pad; a first insulation layer formed on the first surface of the substrate layer to cover the first wiring layer; and a second wiring layer formed on the first insulation layer and electrically connected to the first wiring layer. A diameter of the first hole is gradually decreased from the first surface toward the second surface, and a diameter of the second hole is gradually decreased from the second surface toward the first surface.
申请公布号 US8907489(B2) 申请公布日期 2014.12.09
申请号 US201213603882 申请日期 2012.09.05
申请人 Shinko Electric Industries Co., Ltd. 发明人 Kunimoto Yuji;Koizumi Naoyuki
分类号 H01L23/52;H01L23/48;H01L23/488;H01L23/485;H01L21/44;H01L21/4763;H01L23/498;H05K3/46 主分类号 H01L23/52
代理机构 Drinker Biddle & Reath LLP 代理人 Drinker Biddle & Reath LLP
主权项 1. A wiring substrate comprising: a substrate, a material of the substrate consisting of glass or silicon, the substrate having a first surface and a second surface opposite to the first surface, the substrate being formed with a through hole whose diameter is gradually decreased from the first surface to the second surface; a connection pad formed on the second surface of the substrate; a first wiring layer formed in the through hole and electrically connected to the connection pad; a first insulation layer formed on the first surface of the substrate to cover the first wiring layer; and a second wiring layer formed on the first insulation layer and electrically connected to the first wiring layer; a plurality of insulation layers and a plurality of wiring layers being alternately arranged to form a stack on the first surface side of the substrate; and a solder resist layer formed on a surface of the stack opposite to the substrate, wherein the second surface of the substrate is a mounting surface on which a semiconductor chip is to be mounted, and the first insulation layer formed on the first surface of the substrate is made of a resin material.
地址 Nagano-shi, Nagano JP
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