发明名称 |
Wiring substrate, method of manufacturing the same, and semiconductor device |
摘要 |
A wiring substrate includes: a substrate layer made of glass or silicon and including: a first surface formed with a first hole; and a second surface formed with a second hole and being opposite to the first surface, wherein the first hole is communicated with the second hole; a connection pad formed in the second hole; a first wiring layer formed in the first hole and electrically connected to the connection pad; a first insulation layer formed on the first surface of the substrate layer to cover the first wiring layer; and a second wiring layer formed on the first insulation layer and electrically connected to the first wiring layer. A diameter of the first hole is gradually decreased from the first surface toward the second surface, and a diameter of the second hole is gradually decreased from the second surface toward the first surface. |
申请公布号 |
US8907489(B2) |
申请公布日期 |
2014.12.09 |
申请号 |
US201213603882 |
申请日期 |
2012.09.05 |
申请人 |
Shinko Electric Industries Co., Ltd. |
发明人 |
Kunimoto Yuji;Koizumi Naoyuki |
分类号 |
H01L23/52;H01L23/48;H01L23/488;H01L23/485;H01L21/44;H01L21/4763;H01L23/498;H05K3/46 |
主分类号 |
H01L23/52 |
代理机构 |
Drinker Biddle & Reath LLP |
代理人 |
Drinker Biddle & Reath LLP |
主权项 |
1. A wiring substrate comprising:
a substrate, a material of the substrate consisting of glass or silicon, the substrate having a first surface and a second surface opposite to the first surface, the substrate being formed with a through hole whose diameter is gradually decreased from the first surface to the second surface; a connection pad formed on the second surface of the substrate; a first wiring layer formed in the through hole and electrically connected to the connection pad; a first insulation layer formed on the first surface of the substrate to cover the first wiring layer; and a second wiring layer formed on the first insulation layer and electrically connected to the first wiring layer; a plurality of insulation layers and a plurality of wiring layers being alternately arranged to form a stack on the first surface side of the substrate; and a solder resist layer formed on a surface of the stack opposite to the substrate, wherein the second surface of the substrate is a mounting surface on which a semiconductor chip is to be mounted, and the first insulation layer formed on the first surface of the substrate is made of a resin material. |
地址 |
Nagano-shi, Nagano JP |