Semiconductor device and method for manufacturing same

摘要

According to an embodiment, a semiconductor device, includes a substrate, an inter-layer insulating layer provided above the substrate, a first interconnect provided in a first trench, and a second interconnect provided in a second trench. The first interconnect is made of a first metal, and the first trench is provided in the inter-layer insulating layer on a side opposite to the substrate. The second interconnect is made of a second metal, and the second trench is provided in the inter-layer insulating layer toward the substrate. A width of the second trench is wider than a width of the first trench. A mean free path of electrons in the first metal is shorter than a mean free path of electrons in the second metal, and the first metal is a metal, an alloy or a metal compound, including at least one nonmagnetic element as a constituent element.

主权项

1. A semiconductor device, comprising:
a substrate; an inter-layer insulating layer provided above the substrate; a first interconnect provided in a first trench, and made of a first metal, the first trench being provided in a direction toward the substrate from a front surface of the inter-layer insulating layer on a side opposite to the substrate; and a second interconnect provided in a second trench, and made of a second metal, the second trench being provided in a direction from the front surface of the inter-layer insulating layer toward the substrate, a width of the second trench being wider than a width of the first trench, a mean free path of electrons in the first metal being shorter than a mean free path of electrons in the second metal, and the first metal being a metal, an alloy or a metal compound, including at least one nonmagnetic element as a constituent element.