Method for transferring a thin layer of monocrystalline silicon

摘要

A method for transferring a thin layer of monocrystalline silicon from a free face of a monocrystalline silicon donor substrate having a thickness greater than that of the thin layer includes implanting ions through the free face to form a buried brittle layer in the silicon, using a polymer layer, bonding the donor substrate, by the free face, to a receiver substrate, and fracturing the thin layer from the donor substrate at the buried brittle layer by thermal fracture processing, and selecting conditions of implantation such that a thickness of the thin layer is smaller than 10 micrometers, and a thickness of the polymer layer is below a critical threshold defined as a function of energy and dose of the implantation, the critical threshold being less than or equal to the lesser of 500 nanometers and the thin layer's thickness.

主权项

1. A method for transferring a thin layer of monocrystalline silicon from a free face of a donor substrate that is made of monocrystalline silicon having a thickness that is greater than that of the thin layer to be transferred, the method comprising implanting ions of at least one given species through said free face so as to form a buried brittle layer in said monocrystalline silicon, using a polymer layer, bonding said donor substrate, by said free face, to a receiver substrate, and prompting a fracture of said thin layer off of said donor substrate at said buried brittle layer by thermal fracture processing, said method further comprising selecting conditions of implantation such that a thickness of said thin layer is smaller than 10 micrometers, and a thickness of said polymer layer is below a critical threshold defined as a function of energy and dose of said implantation, said critical threshold being less than or equal to the lesser of 500 nanometers and a thickness of said thin layer.