Semiconductor light emitting device and method for manufacturing the same

摘要

A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer.

主权项

1. A method for manufacturing a semiconductor light emitting device comprising:
forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming an InGaP layer or an InGaAsP layer on an uppermost GaAs layer of the quantum dot active layer or on a first GaAs layer being formed over the quantum dot active layer; forming an InGaP diffraction grating or an InGaAsP diffraction grating which is the InGaP layer or the InGaAsP layer separated in a narrow line-shape by etching the InGaP layer or the InGaAsP layer periodically such that the uppermost GaAs layer or the first GaAs layer is exposed; forming a second GaAs layer burying the InGaP diffraction grating or the InGaAsP diffraction grating so as to be in contact with the uppermost GaAs layer or the first GaAs layer; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second GaAs layer, wherein the processes after the forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer.