Light emitting diodes including current spreading layer and barrier sublayers

摘要

Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

主权项

1. A semiconductor light emitting device comprising:
a semiconductor region that comprises a light-emitting region; a current spreading layer on the semiconductor region; and a conductive barrier layer on the current spreading layer, the conductive barrier layer comprising a plurality of first spaced-apart sublayers.