发明名称 Semiconductor producing device and semiconductor device producing method
摘要 A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.
申请公布号 US8906161(B2) 申请公布日期 2014.12.09
申请号 US200912458096 申请日期 2009.06.30
申请人 Hitachi Kokusai Electric Inc. 发明人 Kasanami Katsuhisa;Miyata Toshimitsu;Ishisaka Mitsunori
分类号 C23C16/00;C23F1/00;H01L21/306;H01J37/32;H01L21/67 主分类号 C23C16/00
代理机构 Kratz, Quintos & Hanson, LLP 代理人 Kratz, Quintos & Hanson, LLP
主权项 1. A semiconductor producing device for supplying a processing gas to a vacuum container, exhausting the gas, and processing a substrate, wherein a substrate holding means for holding the substrate is installed inside the vacuum container, a substrate holding member for holding the substrate is provided on an upper stage of the substrate holding means, a supporting member for supporting a substrate heating means is provided on a lower stage of the substrate holding means, a heating means installation space is formed between an upper surface of the supporting member and a bottom surface of the substrate holding member, the substrate heating means is installed on the bottom of the heating means installation space and installed between multiple projections of the supporting member provided on the upper surface of the supporting member, the supporting member is covered by the substrate holding member, a first clearance is provided between the substrate heating means and the bottom surface of the substrate holding member, a second clearance is provided between upper surface of the multiple projections and the bottom surface of the substrate holding member, a wire for supplying electric power to the substrate heating means is inserted in a hole in a shaft for supporting the substrate holding means, and the heating means installation space and the interior of the shaft, connect to the atmosphere, and such that the substrate heating means and the wire are directly connected to the atmosphere through the hole in the shaft, wherein the supporting member is fixed airtight to the substrate holding member by adhesives or heat weld.
地址 Tokyo JP