LIGHT EMITTING DIODE DEVICE

摘要

The present invention relates to a GaN light emitting diode applying a transparent electrode which includes a metal layer and a metal oxide layer. The light emitting diode according to the present invention includes a substrate, an n-type GaN semiconductor layer which is located on the substrate, a p-type GaN semiconductor layer which is located on the n-type GaN semiconductor layer, an active layer which is interposed between the n-type GaN semiconductor layer and the p-type GaN semiconductor layer, and the transparent electrode which is located on the p-type GaN semiconductor layer. The transparent electrode is formed with a multilayer structure on which a first metal layer and the metal oxide layer are successively stacked. The impedance of the metal oxide layer is matched to the impedance of an external environment on an interface between the metal oxide layer and the external environment.