FABRICATION METHOD FOR SEMICONDUCTOR DEVICE INCLUDED GA

摘要

A method for fabricating semiconductor device including Ga according to the present invention includes a step of preparing a substrate where a buffer layer and a gallium nitride layer are formed on a sapphire substrate; a step of performing a photoresist process for forming an ion injection layer in the active region of the substrate where the gallium nitride layer is grown; a step of forming an ion injection layer by injecting an Si ion to the active region exposed by the photoresist process; a step of forming a heat-treated protection layer on the substrate where the ion injection layer is formed; a step of performing a thermal process by emitting an infra-red ray and an ultraviolet ray after the heat-treated protection layer is formed; and a step of removing the heat-treated protection layer of the heat-treated substrate. In a thermal process of the substrate, an ultraviolet ray is emitted to improve the activation efficiency of ions injected into the substrate, thereby improving device properties and the productivity of a device manufacturing process.