| 摘要 |
PROBLEM TO BE SOLVED: To provide a production apparatus of a single crystal silicon capable of correcting easily temperature data set beforehand corresponding to the amount of growth of the single crystal silicon, when producing the single crystal silicon by a Czochralski method.SOLUTION: A temperature of a crucible 15 is set by the amount of growth of a single crystal silicon T and a temperature inclination of the crucible set corresponding to the amount of growth of the single crystal silicon. The following method can be adopted, in which the amount of growth of the single crystal silicon is divided into each prescribed amount, and the temperature inclination is selected corresponding to each divided amount-of-growth range. |
