| 摘要 |
PROBLEM TO BE SOLVED: To provide an aqueous dispersion for chemical mechanical polishing useful in the manufacturing of a semiconductor device, capable of polishing of a metal film, such as a cobalt film, at a high polishing speed while suppressing corrosion, and capable of maintaining excellent flatness after polishing, and to provide a method for chemical mechanical polishing using the same.SOLUTION: An aqueous dispersion for chemical mechanical polishing contains (A) abrasive grains, (B) an organic acid having 4 or more carbons in which the acid has &pgr; electrons, one or more carboxyl groups, and 2 or more groups of at least one group selected from a group consisting of carboxyl group and hydroxyl group, (C) amino-acid, (D) an anionic surfactant, and (E) an oxidizer, and has a pH of 6.5 or more and 9.5 or less. |
