| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve miniaturization of a semiconductor element, by performing seamless exposing using a phase shift mask in the manufacturing of a semiconductor device.SOLUTION: A mask pattern formed in a halftone phase shift mask used in seamless exposing is composed of a shading band part and a circuit pattern part connecting with the shading band part. A margin area EA for superposition, having a predetermined distance from the connecting part of the shading band part and circuit pattern part, is provided in the circuit pattern part. The shading band part and the circuit pattern part of the margin area EA are formed of a laminated film of a halftone film HF and a light-shielding film CF, and the circuit pattern part other than the margin area EA is formed of the halftone film HF.</p> |
