THIN-FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a thin-film transistor capable of obtaining good transistor characteristics.SOLUTION: The thin-film transistor includes: a substrate; a first barrier film which is formed on the substrate and has barrier properties against impurities from the substrate side and reducibility to an oxide semiconductor layer; a second barrier film which is formed in a selective region on the first barrier film and has barrier properties against hydrogen; the oxide semiconductor layer which includes a first portion formed on the second barrier film and functioning as an active layer, and a second portion formed on the first barrier film and having a lower electric resistance value than the first portion; a gate electrode formed on the first portion of the oxide semiconductor layer via a gate insulating film; and a source electrode or a drain electrode electrically connected to the second portion of the oxide semiconductor layer.