| 摘要 |
PROBLEM TO BE SOLVED: To prevent a reduction in a withstand voltage of a high-frequency semiconductor switch.SOLUTION: A semiconductor device has a gate electrode, source regions and drain regions, a body-contact region, and a body-bias control electrode. The gate electrode is constituted from a plurality of first portions parallely disposed with a first distance and a second portion connecting the plurality of first portions, and is provided via a gate insulating film. The source regions and the drain regions are provided between the plurality of first portions. The body-contact region is disposed on the side of the second portion opposite to the side on which the source regions and the drain regions are provided. The body-bias control electrode is parallel to the second portion, is provided on the body-contact region, has a second distance between the body-bias control electrode and the second portion larger than the first distance, and is connected to the body-contact region. |
