| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a tunnel field-effect transistor at a low cost.SOLUTION: A semiconductor device 100a includes a first material (an oxide semiconductor film 104) and a second material (a surface of a substrate 102). The first material (the oxide semiconductor film 104) comprises an oxide semiconductor. The second material (the surface of the substrate 102) comprises a semiconductor. In the semiconductor device 100a, a heterojunction is formed from the first material (the oxide semiconductor film 104) and the second material (the surface of the substrate 102). In the semiconductor device 100a, a tunnel barrier, where a carrier tunnels between a conduction band and a valence band of the first material (the oxide semiconductor film 104) and the second material (the surface of the substrate 102), is formed.</p> |
