| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: forming a resist pattern 13a by performing isotropic etching on the resist pattern to reduce a width of the resist pattern composed of a chemically-amplified resist formed on a semiconductor substrate 10; subsequently irradiating exposure light vertically on a surface 10a of the semiconductor substrate 10 to generate acid on a surface of the resist pattern 13a; forming on a surface of the resist pattern 13a, a resin film which causes cross-linking reaction by a heat treatment in the presence of acid and performing a heat treatment to form a cross linkage layer 17; and subsequently developing the resin film to form a pattern 18 composed of the resist pattern 13a and the cross linkage layer 17.</p> |
