| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory capable of reducing power consumption during a standby state and an operating state.SOLUTION: In each memory cell 1, first and second transistors are connected in series to a first nonvolatile element 10, third and fourth transistors are connected in series to a second nonvolatile element 20, a first node is provided between the first and second transistors, a second node is provided between the third and fourth transistors, a gate of each of the first and third transistors is connected to a first wiring element, a gate of the second transistor is connected to the second node, a gate of the fourth transistor is connected to the first node, the first transistor is connected between a second wiring element and the first node, the second transistor is connected between the first node and a fourth wiring element, the third transistor is connected between a third wiring element and the second node, and the fourth transistor is connected between the second node and the fourth wiring element. |
