| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is easily manufactured and has high recovery resistance.SOLUTION: A semiconductor device includes: a semiconductor substrate including a diode region having a first-conductivity-type anode layer and a second-conductivity-type cathode layer and a peripheral breakdown-voltage region having a peripheral breakdown-voltage structure; an anode electrode; a cathode electrode; and an insulating film being in contact with a surface of the peripheral breakdown-voltage structure. A first-conductivity-type first semiconductor layer is provided between the peripheral breakdown-voltage structure and the anode layer, and a first-conductivity-type second semiconductor layer is provided on at least a part of the surface in the first semiconductor layer. The impurity concentration of the first conductivity type of the second semiconductor layer is lower than that of the first conductivity type of the first semiconductor layer. At least a part of the second semiconductor layer is exposed from a surface of the semiconductor substrate to contact with the anode electrode, and extends to at least the boundary between the anode electrode and the insulating film toward the peripheral breakdown-voltage region side from the diode region side in the surface of the semiconductor substrate. |
