METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To form a thin film with excellent ashing resistance while maintaining high etching resistance.SOLUTION: A method for manufacturing a semiconductor device includes a step of forming a thin film containing silicon, oxygen, carbon, and a prescribed element of a group III element or a group V element on a substrate by performing, a prescribed number of times, a cycle including the steps of: supplying a material gas containing silicon, carbon, and a halogen element and having an Si-C bond and a catalyst gas to the substrate; supplying an oxidation gas and a catalyst gas to the substrate; and supplying a reformed gas containing the prescribed element to the substrate.